August 1986

3

Philips Semiconductors

Product specification

HF power transistor

BLW97

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (peak value)

max.

65 V

open base

max.

33 V

Emitter-base voltage (open collector)

max.

4 V

Collector current

average

max.

15 A

peak value; f

> 1 MHz

max.

50 A

max.

190 W

R.F. power dissipation

f

max.

230 W

Storage temperature

−65 to + 150 °C

Operating junction temperature

max.

200

°C

Fig.2 D.C. SOAR.

handbook, halfpage

10

1

MGP703

110

IC

(A)

VCE (V)

Th = 70 °C

Tmb = 25 °C

Fig.3

Power/temperature derating curves.

I Continuous d.c. operation

II Continuous r.f. operation (f

> 1 Mhz).

III Short-time operation during mismatch; (f

> 1 MHz).

handbook, halfpage

0

40

120

350

50

150

250

80

MGP704

Ptot

(W)

Th (°C)

ΙΙ

ΙΙΙ

Ι

THERMAL RESISTANCE

From junction to mounting base

(d.c. dissipation)

=

0,63 K/W

From junction to mounting base

(r.f. dissipation)

=

0,48 K/W

From mounting base to heatsink

=

0,20 K/W