 |
 |
|
| MT3S40T |
|
||||||||||||
 TOSHIBA
|
| ||||||||||||
|
2 page 
MT3S40T 2 2002-08-19 Microwave Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Transition Frequency fT VCE=3V, IC=20mA, f=2GHz 13 17 - GHz |S21e| 2(1) VCE=3V, IC=20mA, f=1GHz 14.5 16.5 - dB Insertion Gain |S21e| 2(2) VCE=3V, IC=20mA, f=2GHz 9 11 - dB NF(1) VCE=3V, IC=5mA, f=1GHz - 0.9 - dB Noise Figure NF(2) VCE=3V, IC=5mA, f=2GHz - 1.2 1.8 dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector Cut-off Current ICBO VCB=8V, IE=0 - - 1 µA Emitter Cut-off Current IEBO VEB=1V, IC=0 - - 1 µA DC Current Gain hFE VCE=3V, IC=20mA 70 - 140 - Output Capacitance Cob VCB=1V, IE=0, f=1MHz - 0.77 1.2 pF Reverse Transistor Capacitance Cre VCB=1V, IE=0, f=1MHz (Note 1) - 0.44 0.8 pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. |
