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2SB0873 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SB0873 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page Transistors 1 Publication date: January 2003 SJC00061BED 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage V CE(sat) • Large collector current I C ■ Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −30 V Collector-emitter voltage (Base open) VCEO −20 V Emitter-base voltage (Collector open) VEBO −7V Collector current IC −5A Peak collector current ICP −10 A Collector power dissipation PC 1W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics T a = 25°C ± 3°C Unit: mm Note) The part number in the parenthesis shows conventional part number. 1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package 5.9±0.2 0.7±0.1 4.9±0.2 2.54±0.15 (1.27) (1.27) 0.45 +0.2 –0.1 0.45 +0.2 –0.1 13 2 Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −20 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, I C = 0 −7V Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 −100 nA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −100 nA Forward current transfer ratio * 1, 2 hFE VCE = −2 V, I C = −2 A 90 625 Collector-emitter saturation voltage * 1 VCE(sat) IC = −3 A, IB = − 0.1 A −1V Transition frequency fT VCB = −6 V, IE = 50 mA, f = 200 MHz 120 MHz Collector output capacitance Cob VCB = −20 V, I E = 0, f = 1 MHz 85 pF (Common-emitter reverse transfer) Rank P Q R hFE 90 to 135 120 to 205 180 to 625 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification |
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