September 1991

3

Philips Semiconductors

Product specification

UHF linear push-pull power transistor

BLV58

LIMITING VALUES (per transistor section unless otherwise specified)

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Total device, both sections equally loaded.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

27

V

emitter-base voltage

open collector

−

3.5

V

collector current

DC or average value

−

4A

collector current

peak value;

f

> 1 MHz

−

8A

total power dissipation

DC operation;

(note 1)

−

87

W

storage temperature range

−65

150

°C

junction operating temperature

−

200

°C

Fig.2 DC SOAR.

Total device, both sections equally loaded.

handbook, halfpage

MRA354

1

10

110

(A)

50

o

V

(V)

CE

IC

= 25

C

h

T

T

= 70 C

o

mb

Fig.3 Power derating curve.

(I) Continuous DC operation.

(II) Short time operation during mismatch.

Total device, both sections equally loaded.

handbook, halfpage

MRA355

0

40

80

120

160

200

0

20

40

60

80

100

120

(W)

I

II

( C)

o

Th

P

tot