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BLV58 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLV58 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 13 page September 1991 3 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 LIMITING VALUES (per transistor section unless otherwise specified) In accordance with the Absolute Maximum System (IEC 134). Note 1. Total device, both sections equally loaded. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 27 V VEBO emitter-base voltage open collector − 3.5 V IC,IC(AV) collector current DC or average value − 4A ICM collector current peak value; f > 1 MHz − 8A Ptot total power dissipation DC operation; Tmb =70 °C (note 1) − 87 W Tstg storage temperature range −65 150 °C Tj junction operating temperature − 200 °C Fig.2 DC SOAR. Total device, both sections equally loaded. handbook, halfpage MRA354 1 10 110 (A) 50 o V (V) CE IC = 25 C h T T = 70 C o mb Fig.3 Power derating curve. (I) Continuous DC operation. (II) Short time operation during mismatch. Total device, both sections equally loaded. handbook, halfpage MRA355 0 40 80 120 160 200 0 20 40 60 80 100 120 (W) I II ( C) o Th P tot |
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