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HLX6256RBN Datasheet(PDF) 1 Page - Honeywell Solid State Electronics Center |
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HLX6256RBN Datasheet(HTML) 1 Page - Honeywell Solid State Electronics Center |
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1 / 12 page  OTHER • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Typical Operating Power <10 mW/MHz • Asynchronous Operation • JEDEC Standard Low Voltage CMOS Compatible I/O • Single 3.3 V ± 0.3V Power Supply • Packaging Options - 28-Lead Flat Pack (0.500 in. x 0.720 in.) - 28-Lead DIP, MIL-STD-1835, CDIP2-T28 - 36-Lead Flat Pack (0.630 in. x 0.650 in.) - Various Multi-Chip Module (MCM) Configurations 32K x 8 STATIC RAM—Low Power SOI HLX6256 Military & Space Products RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.55 µm Low Power Process • Total Dose Hardness through 1x106 rad(SiO 2) • Neutron Hardness through 1x1014 cm-2 • Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s • Dose Rate Survivability through 1x1011 rad(Si)/s • Soft Error Rate of <1x10-10 upsets/bit-day • Latchup Free GENERAL DESCRIPTION The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabri- cated with Honeywell’s radiation hardened technology, and is designed for use in low voltage systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 3.3 V ± 0.3V power supply. The RAM is compatible with JEDEC standard low voltage CMOS I/O. Power consumption is typically less than 10 mW/MHz in operation, and less than 2 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 3.3 V. Honeywell’s enhanced SOI RICMOS™IV (Radiation Insen- sitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and pro- cess hardening techniques. The RICMOS™ IV low power process is a SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.7 µm (0.55 µm effective gate length—L eff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP pla- narization process and a lightly doped drain (LDD) struc- ture for improved short channel reliability. A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening. FEATURES |
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