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BLV10 Datasheet(PDF) 8 Page - NXP Semiconductors

Part # BLV10
Description  VHF power transistor
Download  11 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLV10 Datasheet(HTML) 8 Page - NXP Semiconductors

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August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLV10
Fig.9 Typical values; f = 175 MHz;
handbook, halfpage
012
15
0
5
10
MGP255
PL
(W)
PS (W)
70
°C
Th = 25 °C
 VCE = 13,5 V;
− − − VCE = 12,5 V.
Fig.10 Typical values; f = 175 MHz;
handbook, halfpage
0
5
10
20
15
0
5
10
150
0
50
100
15
MGP256
Gp
(dB)
Gp
PL (W)
Th = 70 °C
25
°C
25
°C
70
°C
η
η
(%)
 VCE = 13,5 V;
− − − VCE = 12,5 V.
Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th = 70 °C; Rth mb-h = 0,3 K/W;
VCEnom = 13,5 V or 12,5 V; PS =PSnom at VCEnom and VSWR = 1.
The transistor has been developed for use with
unstabilized supply voltages. As the output power
and drive power increase with the supply voltage,
the nominal output power must be derated in
accordance with the graph for safe operation at
supply voltages other than the nominal. The graph
shows the permissible output power under nominal
conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(PS/PSnom) increases linearly with supply
over-voltage ratio.
handbook, halfpage
0
1.1
1.2
1.3
10
7.5
2.5
0
5
MGP257
50
10
VCE
VCEnom
PS
PSnom
PLnom
(W)
(VSWR = 1)
VSWR =


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