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BLT70 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLT70 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 11 page 1996 Feb 06 5 Philips Semiconductors Product specification UHF power transistor BLT70 APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7). Note 1. Ts is the temperature at the soldering point of the collector pin. Ruggedness in class-AB operation The BLT70 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the following conditions: f = 900 MHz; VCE = 6.5 V; PL = 0.5 W; Ts ≤ 60 °C. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) CW, class-AB 900 4.8 0.01 0.6 ≥6 ≥60 typ. 8.1 typ. 73 Fig.5 Power gain and collector efficiency as functions of load power; typical values. f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts ≤ 60 °C. handbook, halfpage 0 1.0 10 Gp (dB) 0 2 MGD200 4 6 8 0.2 0.4 0.6 0.8 PL (W) 100 ηC (%) ηC 80 20 40 0 60 Gp Fig.6 Load power as a function of input power; typical values. f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts ≤ 60 °C. handbook, halfpage 0 100 PIN (mW) 200 1.0 PL (W) 0 0.8 MGD201 0.6 0.4 0.2 |
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