1996 Feb 06

5

Philips Semiconductors

Product specification

UHF power transistor

BLT70

APPLICATION INFORMATION

Note

Ruggedness in class-AB operation

The BLT70 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the

MODE OF OPERATION

f

(MHz)

(V)

(mA)

(W)

(dB)

(%)

CW, class-AB

900

4.8

0.01

0.6

≥6

≥60

typ. 8.1

typ. 73

Fig.5

Power gain and collector efficiency as

functions of load power; typical values.

handbook, halfpage

0

1.0

10

Gp

(dB)

0

2

MGD200

4

6

8

0.2

0.4

0.6

0.8

PL (W)

100

ηC

(%)

ηC

80

20

40

0

60

Gp

Fig.6

Load power as a function of input

power; typical values.

handbook, halfpage

0

100

PIN (mW)

200

1.0

PL

(W)

0

0.8

MGD201

0.6

0.4

0.2