BUD43D2-1 datasheet(3/12 Pages) ONSEMI

Part #	BUD43D2-1

Description	Bipolar NPN Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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BUD43D2

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC SATURATION VOLTAGE

IC = 400 mA

IB1 =40mA

@ 1

ms

@ TC = 25°C

@ TC = 125°C

VCE(dsat)

–

3.3

6.8

–

V

Dynamic Saturation

IB1 = 40 mA

VCC = 300 Vdc

@ 3

ms

@ TC = 25°C

@ TC = 125°C

–

0.5

1.3

–

Dynamic Saturation

Voltage

IC = 1 A

IB1 = 200 mA

@ 1

ms

@ TC = 25°C

@ TC = 125°C

–

4.4

12.8

–

IB1 = 200 mA

VCC = 300 Vdc

@ 3

ms

@ TC = 25°C

@ TC = 125°C

–

0.5

1.8

–

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

fT

–

13

–

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

–

50

75

pF

Input Capacitance (VEB = 8 Vdc, f = 1 MHz)

Cib

–

250

500

pF

SWITCHING CHARACTERISTICS: Resistive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)

Turn–on Time

IC = 1 Adc, IB1 = 0.2 Adc

IB2 =05Adc

@ TC = 25°C

@ TC = 125°C

ton

–

200

250

–

ns

Turn–off Time

IB2 = 0.5 Adc

VCC = 300 Vdc

@ TC = 25°C

@ TC = 125°C

toff

–

1.5

1.75

–

ms

Turn–on Time

IC = 0.5 Adc, IB1 = 50 mAdc

IB2 = 250 mAdc

@ TC = 25°C

@ TC = 125°C

ton

–

225

600

300

–

ns

Turn–off Time

IB2 = 250 mAdc

VCC = 300 Vdc

@ TC = 25°C

@ TC = 125°C

toff

800

–

1300

1100

–

ns

SWITCHING CHARACTERISTICS: Inductive Load

Fall Time

@ TC = 25°C

@ TC = 125°C

tf

–

90

105

150

–

ns

Storage Time

IC = 0.4 Adc

IB1 = 40 mAdc

IB2 = 0.2 Adc

@ TC = 25°C

@ TC = 125°C

ts

–

0.55

0.7

0.75

–

ms

Crossover Time

IB2 = 0.2 Adc

@ TC = 25°C

@ TC = 125°C

tc

–

85

80

150

–

ns

Fall Time

@ TC = 25°C

@ TC = 125°C

tf

–

100

90

150

–

ns

Storage Time

IC = 1.0 Adc

IB1 = 0.2 Adc

IB2 = 0.5 Adc

@ TC = 25°C

@ TC = 125°C

ts

–

1.05

1.45

1.5

–

ms

Crossover Time

IB2 = 0.5 Adc

@ TC = 25°C

@ TC = 125°C

tc

–

100

175

–

ns

Fall Time

@ TC = 25°C

@ TC = 125°C

tf

–

110

180

150

–

ns

Storage Time

IC = 0.8 Adc

IB1 = 160 mAdc

IB2 = 160 mAdc

@ TC = 25°C

@ TC = 125°C

ts

2.5

–

2.8

–

ms

Crossover Time

IB2 = 160 mAdc

@ TC = 25°C

@ TC = 125°C

tc

–

150

400

250

–

ns

Fall Time

@ TC = 25°C

@ TC = 125°C

tf

–

150

175

225

–

ns

Storage Time

IC = 0.4 Adc

IB1 = 40 mAdc

IB2 = 40 mAdc

@ TC = 25°C

@ TC = 125°C

ts

1.7

–

2.2

2.0

–

ms

Crossover Time

IB2 = 40 mAdc

@ TC = 25°C

@ TC = 125°C

tc

–

125

330

250

–

ns

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