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BLF542 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BLF542 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  October 1992 4 Philips Semiconductors Product specification UHF power MOS transistor BLF542 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 0.1 mA; VGS =0 65 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 10 µA IGSS gate-source leakage current ±VGS = 20 V; VDS =0 −− 1 µA VGS(th) gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 0.3 A; VDS = 10 V 160 240 − mS RDS(on) drain-source on-resistance ID = 0.3 A; VGS = 15 V − 3.3 5 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 1.4 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 14 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 9.4 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 1.7 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS = 10 V. handbook, halfpage 0 100 200 300 4 2 –2 –4 0 MBB777 ID (mA) T.C. (mV/K) Fig.5 Drain current as a function of gate-source voltage, typical values. VDS = 10 V; Tj = 25 °C. handbook, halfpage 0 1.5 1 0.5 0 510 15 MBB759 VGS (V) ID (A) |
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