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BLF522 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLF522 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page September 1992 5 Philips Semiconductors Product specification UHF power MOS transistor BLF522 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 0.7 A; VGS = 15 V; handbook, halfpage 0 1 2 3 4 5 0 50 100 Tj ( oC) 150 MRA253 RDSon ( Ω) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 0 10 20 30 40 50 0 4 8 12 16 C (pF) MRA246 VDS (V) Cis Cos Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 0 2 4 6 8 10 04 8 12 16 MRA256 VDS (V) Crs (pF) |
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