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S29NS128N0SBJW000 Datasheet(PDF) 3 Page - SPANSION |
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S29NS128N0SBJW000 Datasheet(HTML) 3 Page - SPANSION |
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3 / 86 page  This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice. Publication Number S29NS-N_00 Revision A Amendment 12 Issue Date June 13, 2006 Distinctive Characteristics Single 1.8V read, program and erase (1.70V to 1.95V) VersatileIO™ Feature – Device generates data output voltages and tolerates data input voltages as determined by the voltage on the VCCQ pin – 1.8V compatible I/O signals Multiplexed Data and Address for reduced I/O count – A15–A0 multiplexed as DQ15–DQ0 – Addresses are latched by AVD# control input when CE# low Simultaneous Read/Write operation – Data can be continuously read from one bank while executing erase/program functions in other bank – Zero latency between read and write operations Read access times at 80/66 MHz – Burst access times of 9/11 ns at industrial temperature range – Asynchronous random access times of 80 ns – Synchronous random access times of 80 ns Burst length – Continuous linear burst – 8/16/32 word linear burst with wrap around – 8/16/32 word linear burst without wrap around Secured Silicon Sector region – 256 words accessible through a command sequence – 128 words for the Factory Secured Silicon Sector – 128 words for the Customer Secured Silicon Sector Power dissipation (typical values: 8 bits switching, CL = 30 pF) @ 80 MHz – Continuous Burst Mode Read: 28 mA (at 66MHz) – Simultaneous Operation: 50 mA – Program/Erase: 19 mA – Standby mode: 20 µA Sector Architecture – Four 16 K word sectors (S29NS256N and S29NS128N) and four 8K word sectors (S29NS064N) in upper-most address range – Two-hundred-fifty-five 64-Kword sectors (S29NS256N), one- hundred-twenty-seven 64-Kword sectors (S29NS128N) and one hundred twenty-seven 32Kword sectors (S29NS064N) – Sixteen banks (S29NS128N and S29NS256N) and eight banks (S29NS064N) High Performance – Typical word programming time of 40 µs – Typical effective word programming time of 9.4 µs utilizing a 32-Word Write Buffer at VCC Level – Typical effective word programming time of 6 µs utilizing a 32-Word Write Buffer at ACC Level – Typical sector erase time of 150 ms for 16 Kword sectors and 800 ms sector erase time for 64 Kword sectors Security features Persistent Sector Protection – A command sector protection method to lock combinations of individual sectors to prevent program or erase operations within that sector – Sectors can be locked and unlocked in-system at VCC level Password Sector Protection – A sophisticated sector protection method to lock combinations of individual sectors to prevent program or erase operations within that sector using a user-defined 64-bit password Hardware Sector Protection – WP# protects the two highest sectors – All sectors locked when ACC = VIL Handshaking feature – Provides host system with minimum possible latency by monitoring RDY Supports Common Flash Memory Interface (CFI) Software command set compatible with JEDEC 42.4 standards – Backwards compatible with Am29F and Am29LV families Manufactured on 110 nm MirrorBitTM process technology Cycling endurance: 100,000 cycles per sector typical Data retention: 20 years typical Data# Polling and toggle bits – Provides a software method of detecting program and erase operation completion Erase Suspend/Resume – Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation Program Suspend/Resume – Suspends a programming operation to read data from a sector other than the one being programmed, then resume the programming operation Unlock Bypass Program command – Reduces overall programming time when issuing multiple program command sequences Packages – 48-ball Very Thin FBGA (S29NS256N) – 44-ball Very Thin FBGA (S29NS128N, S29NS064N) S29NS-N MirrorBit™ Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) |
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