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S29GL512P12FFIV10 Datasheet(PDF) 3 Page - SPANSION

Part # S29GL512P12FFIV10
Description  3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION

S29GL512P12FFIV10 Datasheet(HTML) 3 Page - SPANSION

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This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.
Publication Number S29GL-P_00
Revision A
Amendment 3
Issue Date November 21, 2006
General Description
The Spansion S29GL01G/512/256/128P are Mirrorbit™ Flash products fabricated on 90 nm process technology. These
devices offer a fast page access time of 25 ns with a corresponding random access time of 110 ns. They feature a Write Buffer
that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time
than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher
density, better performance and lower power consumption.
Distinctive Characteristics
Single 3V read/program/erase (2.7-3.6 V)
Enhanced VersatileI/O™ control
– All input levels (address, control, and DQ input levels) and outputs
are determined by voltage on VIO input. VIO range is 1.65 to VCC
90 nm MirrorBit process technology
8-word/16-byte page read buffer
32-word/64-byte write buffer reduces overall programming
time for multiple-word updates
Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number
– Can be programmed and locked at the factory or by the customer
Uniform 64Kword/128KByte Sector Architecture
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
100,000 erase cycles per sector typical
20-year data retention typical
Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
Suspend and Resume commands for Program and Erase
operations
Write operation status bits indicate program and erase
operation completion
Unlock Bypass Program command to reduce programming
time
Support for CFI (Common Flash Interface)
Persistent and Password methods of Advanced Sector
Protection
WP#/ACC input
– Accelerates programming time (when VACC is applied) for greater
throughput during system production
– Protects first or last sector regardless of sector protection settings
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or erase
cycle completion
Performance Characteristics
* Access times are dependent on VCC and VIO operating ranges.
See Ordering Information page for further details.
V1: VCC = 3.0–3.6 V. V2: VCC = VIO = 2.7–3.6 V.
V3: VIO = 1.65–VCC, VCC = 3 V.
** Contact a sales representative for availability.
S29GL-P MirrorBit
TM Flash Family
S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gigabit, 512 Megabit , 256 Megabit and 128 Megabit
3.0 Volt-only Page Mode Flash Memory featuring
90 nm MirrorBit Process Technology
Data Sheet (Advance Information)
Max. Read Access Times (ns)*
Parameter
512/256/128 Mb**
1 Gb
V1
V2
V3
V1
V2
V3
Random Access Time (tACC)
100
110
120
110
120
130
Page Access Time (tPACC)
25
25252525
25
CE# Access Time (tCE)
110
110
120
110
120
130
OE# Access Time (tOE)
25
25302525
30
Current Consumption (typical values)
Random Access Read
30 mA
8-Word Page Read
1 mA
Program/Erase
50 mA
Standby
1 µA
Program & Erase Times (typical values)
Single Word Programming
60 µs
Effective Write Buffer Programming (VCC) Per Word
15 µs
Effective Write Buffer Programming (VACC) Per Word
15 µs
Sector Erase Time (64 Kword Sector)
0.5 s


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