1996 Oct 21

2

Philips Semiconductors

Product Specification

VHF push-pull power MOS transistor

BLF278

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Broadcast transmitters in the VHF frequency range.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode

vertical D-MOS transistor encapsulated in a 4-lead,

SOT262A1 balanced flange package with two ceramic

caps. The mounting flange provides the common source

connection for the transistors.

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PINNING - SOT262A1

PIN

SYMBOL

DESCRIPTION

drain 1

drain 2

gate 1

gate 2

5

s

source

Fig.1 Simplified outline and symbol.

12

34

MAM098

Top view

55

d

g

s

d

g

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-B

108

50

300

>20

>60

CW, class-C

108

50

300

typ. 18

typ. 80

CW, class-AB

225

50

250

>14

typ. 16

>50

typ. 55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.