PBSS5420D datasheet(3/16 Pages) PHILIPS

Part #	PBSS5420D

Description	20 V, 4 A PNP low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 16 page

9397 750 14027

Product data sheet

Rev. 01 — 7 April 2005

3 of 16

Philips Semiconductors

PBSS5420D

20 V, 4 A PNP low VCEsat (BISS) transistor

[1]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[4]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[5]

Operated under pulsed conditions: Duty cycle

δ≤ 10 % and pulse width tp ≤ 10 ms.

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB; 6 cm2 collector mounting pad

(3) FR4 PCB; 1 cm2 collector mounting pad

(4) FR4 PCB; standard footprint

Fig 1.

Power derating curves

Table 5:

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

(1)

Tamb (°C)

−75

175

125

25

75

−25

006aaa270

800

400

1200

1600

Ptot

(mW)

0

(2)

(4)

(3)

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