IRF710A

400

--

2.0

--

--

--

--

--

0.53

--

--

--

--

--

35

13

11

15

38

13

10

1.8

5.4

--

--

4.0

100

-100

10

100

3.6

--

280

42

17

30

40

90

35

14

--

--

1.29

215

--

--

--

224

0.87

2

6

1.5

--

--

Notes;

(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

(2) L=50mH, I

(3) I

(4) Pulse Test: Pulse Width = 250

µs, Duty Cycle ≤ 2%

(5) Essentially Independent of Operating Temperature

1&+$11(/

32:(5 026)(7

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain ( Miller ) Charge

∆BV/∆T

J

V

V/

°C

V

nA

µA

Ω

pF

ns

nC

--

--

--

--

--

--

--

--

--

--

--

--

--

See Fig 7

(4)

(4)

See Fig 13

(4) (5)

Drain-to-Source Leakage Current

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

(1)

Diode Forward Voltage

(4)

Reverse Recovery Time

Reverse Recovery Charge

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

--

--

--

--

--

A

V

ns

µC

Integral reverse pn-diode

in the MOSFET

(4)