NCV7513FTG datasheet(8/24 Pages) ONSEMI

Part #	NCV7513FTG

Description	FLEXMOS Hex Low?뭆ide MOSFET Pre?묭river

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NCV7513

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8

ELECTRICAL CHARACTERISTICS (continued) (4.75 V

vVCCXv5.25 V, VDD = VCCX, −40°CvTJv125°C, unless otherwise

specified.) (Note 8)

Characteristic

Symbol

Conditions

Min

Typ

Max

Unit

Serial Peripheral Interface (continued) (Figure 9) Vccx = 5.0 V, VDD = 3.3 V, FSCLK = 4.0 MHz, CLOAD = 200 pF

SO Rise Time

(20% VSO to 80% VDD)

CLOAD = 200 pF (Note 9)

–

25

50

ns

SO Fall Time

(80% VSO to 20% VDD)

CLOAD = 200 pF (Note 9)

–

50

ns

CSB Setup Time

CSB = 0.8 V to SCLK = 2.0 V

(Note 9)

60

–

ns

CSB Hold Time

SCLK = 0.8 V to CSB = 2.0 V

(Note 9)

75

–

ns

CSB to SO Time

CSB = 0.8 V to SO Data Valid

(Note 9)

–

65

125

ns

SO Delay Time

SCLK = 0.8 V to SO Data Valid

(Note 9)

–

65

125

ns

Transfer Delay Time

CSB Rising Edge to Next

Falling Edge (Note 9)

1.0

–

ms

8. Designed to meet these characteristics over the stated voltage and temperature recommended operating ranges, though may not be 100%

parametrically tested in production.

9. Guaranteed by design.

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