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MT3S06T Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # MT3S06T
Description  VHF-UHF Band Low Noise Amplifier Application (Oscillator Applic)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MT3S06T Datasheet(HTML) 2 Page - Toshiba Semiconductor

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MT6L53S
2002-01-23
2
Electrical Characteristics Q1-Side (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
¾
¾
0.1
mA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
¾
¾
1
mA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
¾
140
¾
Transition frequency
fT
VCE = 3 V, IC = 5 mA
7
10
¾
GHz
ïS21eï
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
¾
7.5
¾
Insertion gain
ïS21eï
2 (2)
VCE = 3 V, IC = 7 mA, f = 2 GHz
4.5
8.3
¾
dB
NF (1)
VCE = 1 V, IC = 3 mA, f = 2 GHz
¾
1.7
3
Noise figure
NF (2)
VCE = 3 V, IC = 3 mA, f = 2 GHz
¾
1.6
3
dB
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note 2)
¾
0.35
0.75
pF
Electrical Characteristics Q2-Side (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
¾
¾
0.1
mA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
¾
¾
1
mA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
80
¾
140
¾
Transition frequency
fT
VCE = 1 V, IC = 5 mA
2
4.5
¾
GHz
ïS21eï
2 (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
¾
7.5
¾
Insertion gain
ïS21eï
2 (2)
VCE = 3 V, IC = 20 mA, f = 1 GHz
7.5
10.5
¾
dB
Noise figure
NF
VCE = 1 V, IC = 5 mA, f = 1 GHz
¾
1.4
2.2
dB
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note 2)
¾
0.95
1.15
pF
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.


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