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MT3S06T Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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MT3S06T Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page MT6L53S 2002-01-23 2 Electrical Characteristics Q1-Side (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 5 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ¾ ¾ 1 mA DC current gain hFE VCE = 1 V, IC = 5 mA 70 ¾ 140 ¾ Transition frequency fT VCE = 3 V, IC = 5 mA 7 10 ¾ GHz ïS21eï 2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz ¾ 7.5 ¾ Insertion gain ïS21eï 2 (2) VCE = 3 V, IC = 7 mA, f = 2 GHz 4.5 8.3 ¾ dB NF (1) VCE = 1 V, IC = 3 mA, f = 2 GHz ¾ 1.7 3 Noise figure NF (2) VCE = 3 V, IC = 3 mA, f = 2 GHz ¾ 1.6 3 dB Reverse transfer capacitance Cre VCB = 1 V, IE = 0, f = 1 MHz (Note 2) ¾ 0.35 0.75 pF Electrical Characteristics Q2-Side (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 5 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ¾ ¾ 1 mA DC current gain hFE VCE = 1 V, IC = 5 mA 80 ¾ 140 ¾ Transition frequency fT VCE = 1 V, IC = 5 mA 2 4.5 ¾ GHz ïS21eï 2 (1) VCE = 1 V, IC = 5 mA, f = 1 GHz ¾ 7.5 ¾ Insertion gain ïS21eï 2 (2) VCE = 3 V, IC = 20 mA, f = 1 GHz 7.5 10.5 ¾ dB Noise figure NF VCE = 1 V, IC = 5 mA, f = 1 GHz ¾ 1.4 2.2 dB Reverse transfer capacitance Cre VCB = 1 V, IE = 0, f = 1 MHz (Note 2) ¾ 0.95 1.15 pF Note 2: Cre is measured by 3 terminal method with capacitance bridge. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. |
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