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BLF1048 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLF1048 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2000 Feb 02 3 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note 1. Determined under specified RF operating conditions, based on maximum peak junction temperature. CHARACTERISTICS Tj =25 °C unless otherwise specified. APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th =25 °C; Rth j-h = 1.15 K/W, unless otherwise specified. Ruggedness in class-AB operation The BLF1048 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 960 MHz at rated load power. SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage −±20 V ID drain current (DC) − 9A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-h thermal resistance from junction to heatsink Th =25 °C; Ptot = 100 W; note 1 1.15 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 1.4 mA 65 −− V VGSth gate-source threshold voltage VDS = 10 V; ID = 140 mA 4 − 5V IDSS drain-source leakage current VGS = 0; VDS =26V −− 10 µA IDSX drain cut-off current VGS =VGSth +9V; VDS =10V 25 −− A IGSS gate leakage current VGS = ±20 V; VDS =0 −− 250 nA gfs forward transconductance VDS = 10 V; ID =7A − 4 − S RDSon drain-source on-state resistance VGS =VGSth +9V; ID =7A − 150 − m Ω Cis input capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 92 − pF Cos output capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 74 − pF Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 3 − pF MODE OF OPERATION f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) CW, class-AB (2-tone) f1 = 960; f2 = 960.1 26 90 (PEP) >14 >35 ≤−26 CW, class-AB (1-tone) 960 26 90 >14 >45 − |
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