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S71WS512NB0BFWYP0 Datasheet(PDF) 6 Page - SPANSION |
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S71WS512NB0BFWYP0 Datasheet(HTML) 6 Page - SPANSION |
6 / 13 page 4 S71WS-N S71WS-N_00_A6 July 19, 2006 Data Sheet (Adv an ce Inf o r m a t io n) 3. Input/Output Descriptions Table 3.1 identifies the input and output package connections provided on the device. Table 3.1 Input/Output Descriptions Symbol Description A23-A0 Address inputs DQ15-DQ0 Data input/output OE# Output Enable input. Asynchronous relative to CLK for the Burst mode. WE# Write Enable input. VSS Ground NC No Connect; not connected internally RDY Ready output. Indicates the status of the Burst read. The WAIT# pin of the pSRAM is tied to RDY. CLK Clock input. In burst mode, after the initial word is output, subsequent active edges of CLK increment the internal address counter. Should be at VIL or VIH while in asynchronous mode AVD# Address Valid input. Indicates to device that the valid address is present on the address inputs. Low = for asynchronous mode, indicates valid address; for burst mode, causes starting address to be latched. High = device ignores address inputs F-RST# Hardware reset input. Low = device resets and returns to reading array data F-WP# Hardware write protect input. At VIL, disables program and erase functions in the four outermost sectors. Should be at VIH for all other conditions. F-ACC Accelerated input. At VHH, accelerates programming; automatically places device in unlock bypass mode. At VIL, disables all program and erase functions. Should be at VIH for all other conditions. R-CE1# Chip-enable input for pSRAM. F1-CE# Chip-enable input for Flash 1. Asynchronous relative to CLK for Burst Mode. F2-CE# Chip-enable input for Flash 2. Asynchronous relative to CLK for Burst Mode. This applies to the 512Mb MCP only. R-CRE Control Register Enable (pSRAM). For CellularRAM only. F-VCC Flash 1.8 Volt-only single power supply. R-VCC pSRAM Power Supply. R-UB# Upper Byte Control (pSRAM). R-LB# Lower Byte Control (pSRAM) DNU Do Not Use |
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