2000 Feb 23

2

Philips Semiconductors

Objective specification

UHF power LDMOS transistor

BLF1043

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on mounting base eliminates DC isolators,

reducing common mode inductance

• Designed for broadband operation (HF to 1 GHz).

APPLICATIONS

• Communication transmitter applications in the UHF

frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS

transistor encapsulated in a 2-lead flangeless package

(SOT538A) with a ceramic cap. The common source is

connected to the mounting base.

PINNING - SOT538A

PIN

DESCRIPTION

1

drain

2

gate

3

source

handbook, halfpage

2

3

1

Top view

MBK905

Fig.1 Simplified outline.

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

η

D

(%)

(dBc)

CW, class-AB (2-tone)

26

10 (PEP)

>16

>35

≤−30

CW, class-AB (1-tone)

960

26

10

>16

>45

−

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.