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S29CD016J0JQAI003 Datasheet(PDF) 3 Page - SPANSION

Part # S29CD016J0JQAI003
Description  32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION

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This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qual-
ification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document
may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication Number S29CD-J_CL-J_00
Revision B
Amendment 1
Issue Date September 27, 2006
General Description
The Spansion S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process
technology. These burst-mode Flash devices are capable of performing simultaneous read and write
operations with zero latency on two separate banks, using separate data and address pins. These products
can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single VCC of 2.5 V to 2.75 V (S29CD-J) or
3.0 V to 3.6 V (S29CL-J) that make them ideal for today’s demanding automotive applications.
Distinctive Characteristics
Single 2.6 V (S29CD-J) or 3.3 V (S29CL-J) for read/program/
erase
110 nm Floating Gate Technology
Simultaneous Read/Write operation with zero latency
x32 Data Bus
Dual Boot Sector Configuration (top and bottom)
Flexible Sector Architecture
– CD016J & CL016J: Eight 2K Double word, Thirty-two 16K Double
word, and Eight 2K Double Word sectors
– CD032J & CL032J: Eight 2K Double word, Sixty-two 16K Double
Word, and Eight 2K Double Word sectors
VersatileI/O™ control (1.65 V to 3.6 V)
Programmable Burst Interface
– Linear for 2, 4, and 8 double word burst with or without wrap around
Secured Silicon Sector that can be either factory or customer
locked
20 year data retention (typical)
Cycling Endurance: 1 million write cycles per sector (typical)
Command set compatible with JEDEC (JC42.4) standard
Supports Common Flash Interface (CFI)
Extended Temperature range
Persistent and Password methods of Advanced Sector
Protection
Unlock Bypass program command to reduce programming
time
ACC input pin to reduce factory programming time
Data Polling bits indicate program and erase operation
completion
Hardware (WP#) protection of two outermost sectors in the
large bank
Ready/Busy (RY/BY#) output indicates data available to
system
Suspend and Resume commands for Program and Erase
Operation
Offered Packages
– 80-pin PQFP
– 80-ball Fortified BGA
– Pb-free package option available
– Known Good Die
Performance Characteristics
S29CD-J & S29CL-J Flash Family
S29CD032J, S29CD016J, S29CL032J, S29CL016J
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only
Simultaneous Read/Write, Dual Boot, Burst Mode
Flash Memory with VersatileI/O™
Data Sheet (Preliminary)
Read Access Times
Speed Option (MHz)
75
(32 Mb only)
66
56
40
Max Asynch. Access Time, ns (tACC)48
54
54
54
Max Synch. Burst Access, ns (tBACC)
7.5 (FBGA)
8
8
8
Min Initial Clock Delay (clock cycles)
5
4
4
3
Max CE# Access Time, ns (tCE)52
54
54
54
Max OE# Access time, ns (tOE)20
20
20
20
Current Consumption (Max values)
Continuous Burst Read @ 75 MHz
90 mA
Program
50 mA
Erase
50 mA
Standby Mode
60 µA
Typical Program and Erase Times
Double Word Programming
18 µs
Sector Erase
1.0 s


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