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NTB35N15 Datasheet(PDF) 2 Page - ON Semiconductor |
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NTB35N15 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 12 page NTB35N15 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 150 – – 240 – – Vdc mV/ °C Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 150 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 150 Vdc, TJ = 125°C) IDSS – – – – 5.0 50 mAdc Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0) IGSS – – ±100 nAdc ON CHARACTERISTICS Gate Threshold Voltage VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) 2.0 – 2.9 –8.56 4.0 – Vdc mV/ °C Static Drain–to–Source On–State Resistance (VGS = 10 Vdc, ID = 18.5 Adc) (VGS = 10 Vdc, ID = 18.5 Adc, TJ = 125°C) RDS(on) – – 0.042 – 0.050 0.120 W Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 18.5 Adc) VDS(on) – 1.55 1.78 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 18.5 Adc) gFS – 26 – mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f 10MH ) Ciss – 2275 3200 pF Output Capacitance f = 1.0 MHz) Coss – 450 650 Reverse Transfer Capacitance Crss – 90 175 SWITCHING CHARACTERISTICS (Notes 3 & 4) Turn–On Delay Time (VDD = 120 Vdc, ID = 37 Adc, V 10 Vd td(on) – 20 35 ns Rise Time VGS = 10 Vdc, RG = 9.1 W) tr – 125 225 Turn–Off Delay Time RG = 9.1 W) td(off) – 90 175 Fall Time tf – 120 210 Total Gate Charge (VDS = 120 Vdc, ID = 37 Adc, V 10 Vd ) Qtot – 70 100 nC Gate–to–Source Charge VGS = 10 Vdc) Qgs – 14 – Gate–to–Drain Charge Qgd – 32 – BODY–DRAIN DIODE RATINGS (Note 3) Diode Forward On–Voltage (IS = 37 Adc, VGS = 0 Vdc) (IS = 37 Adc, VGS = 0 Vdc, TJ = 125°C) VSD – – 1.00 0.88 1.5 – Vdc Reverse Recovery Time (IS = 37 Adc, VGS = 0 Vdc, dI /dt 100 A/ ) trr – 170 – ns dIS/dt = 100 A/ms) ta – 112 – tb – 58 – Reverse Recovery Stored Charge QRR – 1.14 – mC 3. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 4. Switching characteristics are independent of operating junction temperature. |
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