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BGY122B Datasheet(PDF) 2 Page - NXP Semiconductors |
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BGY122B Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 16 page 1998 May 11 2 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B FEATURES • Single 4.8 V nominal supply voltage • 1.2 W output power • Easy control of output power by DC voltage • Very high efficiency (typ. 55%) • Silicon bipolar technology • Standby current less than 100 µA. APPLICATIONS • Hand-held transmitting equipment operating in the 824 to 849 MHz and 872 to 905 MHz frequency ranges. DESCRIPTION The BGY122A and BGY122B are three-stage UHF amplifier modules in a SOT388B package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 1.2 W into a load of 50 Ω with an RF drive power of 2 mW. PINNING - SOT388B PIN DESCRIPTION 1 RF input 2VC 3VS 4 RF output Flange ground Fig.1 Simplified outline. handbook, halfpage 12 3 4 Top view MBK197 QUICK REFERENCE DATA RF performance at Tmb =25 °C. TYPE MODE OF OPERATION f (MHz) VS (V) PL (W) Gp (dB) η (%) ZS; ZL ( Ω) BGY122A CW 824 to 849 4.8 1.2 ≥27.8 typ. 55 50 BGY122B CW 872 to 905 4.8 1.2 ≥27.8 typ. 55 50 |
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