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BGY122B Datasheet(PDF) 7 Page - NXP Semiconductors |
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BGY122B Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 16 page 1998 May 11 7 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B Fig.11 Efficiency as a function of load power; BGY122B; typical values. ZS =ZL =50 Ω; PD =2 mW; VS = 4.8 V; Tmb =25 °C. handbook, halfpage 0 0.4 80 40 0 20 60 MDA156 0.8 1.2 1.6 2.0 PL (W) η (%) 905 MHz 872 MHz Fig.12 Load power as a function of frequency; BGY122B; typical values. ZS =ZL =50 Ω; PD = 2 mW; VC = 3 V; Tmb =25 °C. handbook, halfpage 840 860 PL (W) 920 900 2.0 0 1.6 MDA157 880 f (MHz) 1.2 0.8 0.4 VS = 4.8 V 4 V Fig.13 Load power as a function of mounting base temperature; BGY122B; typical values. ZS =ZL =50 Ω; PD = 2 mW; VS = 4.8 V; VC =3V. handbook, halfpage −40 120 2.0 PL (W) 0 0.4 MDA158 0.8 1.2 1.6 040 80 Tmb ( oC) 872 MHz 905 MHz Fig.14 Load power as a function of drive power; BGY122B; typical values. ZS =ZL =50 Ω; VS = 4.8 V; VC = 3 V; Tmb =25 °C. handbook, halfpage −40 −30 10 40 20 −20 −40 0 −20 −10 0 MDA160 PD (dBm) PL (dBm) 872 MHz 905 MHz |
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