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BGD816L Datasheet(PDF) 3 Page - NXP Semiconductors |
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BGD816L Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2000 Apr 12 3 Philips Semiconductors Objective specification CATV amplifier module BGD816L CHARACTERISTICS Bandwidth 40 to 870 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75 Ω SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp power gain f = 45 MHz 21.2 − 21.8 dB f = 870 MHz 22 − 23 dB SL slope straight line f = 45 to 870 MHz; note 1 0.5 1 1.5 dB FL flatness straight line f = 45 to 100 MHz −−±0.35 dB f = 100 to 800 MHz −−±0.5 dB f = 800 to 870 MHz −−±0.15 dB s11 input return losses f = 45 to 80 MHz 21 −− dB f = 80 to 160 MHz 20 −− dB f = 160 to 320 MHz 19 −− dB f = 320 to 550 MHz 18 −− dB f = 550 to 650 MHz 17 −− dB f = 650 to 750 MHz 16 −− dB f = 750 to 870 MHz 15 −− dB f = 870 to 914 MHz 14 −− dB s22 output return losses f = 45 to 80 MHz 21 −− dB f = 80 to 160 MHz 20 −− dB f = 160 to 320 MHz 19 −− dB f = 320 to 550 MHz 18 −− dB f = 550 to 650 MHz 17 −− dB f = 650 to 750 MHz 16 −− dB f = 750 to 870 MHz 15 −− dB f = 870 to 914 MHz 14 −− dB s21 phase response f = 50 MHz −45 − +45 deg CTB composite triple beat 79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz −−−64 dB 112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz −−−58 dB 132 chs flat; Vo = 44 dBmV; fm = 859.25 MHz −−−54 dB 112 chs; fm = tbd MHz; Vo = 48.2 dBmV at 745 MHz; note 2 −−−57 dB 79 chs; fm = tbd MHz; Vo = 45.3 dBmV at 547 MHz; note 3 −−−65 dB Xmod cross modulation 79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz −−−63 dB 112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz −−−59 dB 132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz −−−58 dB 112 chs; fm = tbd MHz; Vo = 48.2 dBmV at 745 MHz; note 2 −−−54.5 dB 79 chs; fm = tbd MHz; Vo = 45.3 dBmV at 547 MHz; note 3 −−−63.5 dB |
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