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BGD802N Datasheet(PDF) 4 Page - NXP Semiconductors |
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BGD802N Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  1999 Mar 22 4 Philips Semiconductors Product specification CATV amplifier module BGD802N Table 2 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase =30 °C; ZS =ZL =75 Ω Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp +fq = 860.5 MHz. 2. Measured according to DIN45004B: fp = 851.25 MHz; Vp =Vo; fq = 858.25 MHz; Vq =Vo −6 dB; fr = 860.25 MHz; Vr =Vo −6 dB; measured at fp +fq − fr = 849.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp power gain f = 50 MHz 18 18.5 19 dB f = 860 MHz 18.5 19.5 − dB SL slope cable equivalent f = 40 to 860 MHz 0.2 0.9 2 dB FL flatness of frequency response f = 40 to 860 MHz −±0.1 ±0.25 dB S11 input return losses f = 40 to 80 MHz 20 32 − dB f = 80 to 160 MHz 18.5 27 − dB f = 160 to 320 MHz 17 24 − dB f = 320 to 640 MHz 15.5 22 − dB f = 640 to 860 MHz 14 20.5 − dB S22 output return losses f = 40 to 80 MHz 20 33 − dB f = 80 to 160 MHz 18.5 29 − dB f = 160 to 860 MHz 17 22 − dB S21 phase response f = 50 MHz −45 − +45 deg CTB composite triple beat 129 channels flat; Vo = 44 dBmV; measured at 859.25 MHz −−−54 dB Xmod cross modulation 129 channels flat; Vo = 44 dBmV; measured at 55.25 MHz −−−59 dB CSO composite second order distortion 129 channels flat; Vo = 44 dBmV; measured at 860.5 MHz −−−56 dB d2 second order distortion note 1 −−75 −69 dB Vo output voltage dim = −60 dB; note 2 61.5 63.5 − dBmV F noise figure see Table 1 −−− dB Itot total current consumption (DC) note 3 − 395 410 mA |
Similar Part No. - BGD802N |
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Similar Description - BGD802N |
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