Advance Product Information

October 20, 2004

3

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

TABLE II

RF CHARACTERIZATION TABLE

qC, Nominal)

(Vd = 8V, Id = 2.6 A)

SYMBOL

PARAMETER

TEST

CONDITION

TYPICAL

UNITS

Gain

Small Signal Gain

f = 13-16 GHz

24

dB

IRL

Input Return Loss

f = 13-16 GHz

14

dB

ORL

Output Return Loss

f = 13-16 GHz

14

dB

Psat

Saturated Power

f = 13-16 GHz

38

dBm

TGA2514-EPU-FL

TABLE III

THERMAL INFORMATION

Parameter

Test Conditions

(

(

qC/W)

(HRS)

Resistance

(channel to backside of

package)

Vd = 8 V

Pdiss = 20.8 W

150

3.9

1 E+6

Note: Package backside SnPb soldered to carrier at 70

°C baseplate temperature. At

saturated output power, the DC power consumption is 28.8 W with 6.5 W RF power

delivered to the load. Power dissipated is 22.3 W and the temperature rise in the

channel is 87

°C. The baseplate temperature must be reduced to 63°C to remain

below the 150

°C maximum channel temperature.