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STTH810D Datasheet(PDF) 3 Page - STMicroelectronics

Part # STTH810D
Description  Ultrafast recovery - high voltage diode
Download  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH810D Datasheet(HTML) 3 Page - STMicroelectronics

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STTH810
Characteristics
3/11
Table 4.
Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
trr
Reverse recovery time
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
64
85
ns
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
47
65
IRM
Reverse recovery current
IF = 8 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
12
16
A
S
Softness factor
IF = 8 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
2
tfr
Forward recovery time
IF = 8 A
dIF/dt = 50 A/µs
VFR = 1.5 x VFmax, Tj = 25° C
300
ns
VFP
Forward recovery voltage
IF = 8 A, dIF/dt = 50 A/µs,
Tj = 25° C
5.5
V
Figure 1.
Conduction losses versus
average current
Figure 2.
Forward voltage drop versus
forward current
P(W)
0
2
4
6
8
10
12
14
16
18
012
34567
8
9
10
=0.05
=0.1
=0.2
=0.5
=1
T
I(A)
F(AV)
I
(A)
FM
0
10
20
30
40
50
60
70
80
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T
j=25°C
(Maximum values)
T
j=150°C
(Maximum values)
T
j=150°C
(Typical values)
V
(V)
FM
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
DO-220AB
D²PAK
t(s)
p
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Single pulse
TO-220FPAB
t(s)
p


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