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HBAT-540F Datasheet(PDF) 7 Page - Agilent(Hewlett-Packard) |
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HBAT-540F Datasheet(HTML) 7 Page - Agilent(Hewlett-Packard) |
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7 / 8 page  7 VF – FORWARD VOLTAGE (V) .01 10 1 .1 300 100 0 0.1 0.3 0.2 0.5 0.4 0.6 HSMS-270x HBAT-540x Figure 7. Forward Current vs. Forward Voltage at 25 °C. Because the automatic, pick-and- place equipment used to assemble these products selects dice from adjacent sites on the wafer, the two diodes which go into the HBAT-5402 or HBAT-540C (series pair) are closely matched — without the added expense of testing and binning. Current Handling in Clipping/ Clamping Circuits The purpose of a clipping/clamp- ing diode is to handle high cur- rents, protecting delicate circuits downstream of the diode. Current handling capacity is determined by two sets of characteristics, those of the chip or device itself and those of the package into which it is mounted. current limiting pull-down (or pull-up) long cross-site cable noisy data-spikes Vs 0V voltage limited to Vs + Vd 0V – Vd Figure 8. Two Schottky Diodes Are Used for Clipping/Clamping in a Circuit. Consider the circuit shown in Figure 8, in which two Schottky diodes are used to protect a circuit from noise spikes on a stream of digital data. The ability of the diodes to limit the voltage spikes is related to their ability to sink the associated current spikes. The importance of current handling capacity is shown in Figure 9, where the forward voltage generated by a forward current is compared in two diodes. The first is a conventional Schottky diode of the type gener- ally used in RF circuits, with an RS of 7.7 Ω. The second is a Schottky diode of identical characteristics, save the RS of 1.0 Ω. For the conventional diode, the relatively high value of RS causes the voltage across the diode’s termi- nals to rise as current increases. The power dissipated in the diode heats the junction, causing RS to climb, giving rise to a runaway thermal condition. In the second diode with low RS , such heating does not take place and the voltage across the diode terminals is maintained at a low limit even at high values of current. Maximum reliability is obtained in a Schottky diode when the steady state junction temperature is maintained at or below 150 °C, although brief excursions to higher junction temperatures can be tolerated with no significant impact upon mean-time-to-failure, MTTF. In order to compute the junction temperature, Equations (1) and (3) below must be simulta- neously solved. IF = IS e –1 11600 ( V F – IFRS) nT J (1) IS = I0 e T J 298 2 n 1 T J 1 298 – 4060 – (2) TJ = VF IF θJC + TA (3) where: IF = forward current IS = saturation current VF = forward voltage RS = series resistance TJ = junction temperature IO = saturation current at 25 °C n = diode ideality factor θ JC = thermal resistance from junction to case (diode lead) = θpackage + θchip TA = ambient (diode lead) temperature Equation (1) describes the for- ward V-I curve of a Schottky diode. Equation (2) provides the value for the diode’s saturation current, which value is plugged into (1). Equation (3) gives the value of junction temperature as a function of power dissipated in the diode and ambient (lead) temperature. 0 0.1 0.2 0.3 0.5 0.4 IF – FORWARD CURRENT (mA) 0 3 2 1 6 4 5 Rs = 7.7 Ω Rs = 1.0 Ω Figure 9. Comparison of Two Diodes. |
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