HY64UD16322M datasheet(4/11 Pages) HYNIX

Part #	HY64UD16322M

Description	2M x 16 bit Low Low Power 1T/1C Pseudo SRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY64UD16322M Series

4

Revision 1.7

March. 2002

Note 1. VIL=-1.5V for pulse width less than 10ns

Undershoot is sampled, not 100% tested.

RECOMMENDED DC OPERATING CONDITION

Symbol

Parameter

Min.

Vdd

Supply Voltage

2.7

Unit

V

Typ.

3.0

Max.

3.3

VSS

Ground

0

V

-

0

VIH

Input High Voltage

2.2

V

-

Vdd+0.3

VIL

Input Low Voltage

-0.31

V

-

0.6

DC ELECTRICAL CHARACTERISTICS

Vdd=2.7V~3.3V, TA= -25

°C to 85°C(E) / -40°C to 85°C(I)

CAPACITANCE

(Temp = 25

°C, f=1.0MHz)

Symbol

Parameter

CIN

Input Capacitance(Add, /CS1, CS2, /WE, /OE, /UB, /LB)

Unit

pF

Max.

8

Condition

VIN=0V

COUT

Output Capacitance(I/O)

pF

10

VI/O=0V

Note : These parameters are sampled and not 100% tested

Sym.

Parameter

Min.

ILI

Input Leakage Current

-1

Unit

µA

Typ.

-

Max.

1

Test Condition

VSS

≤VIN≤Vdd

ILO

Output Leakage Current

-1

µA

-

1

VSS

≤VOUT≤Vdd,

/CS1=VIH, CS2=VIH,

/OE=VIH or /WE=VIL

ICC

Operating Power Supply Current

-

mA

-

3

/CS1=VIL, CS2=VIH,

VIN=VIH or VIL, II/O=0mA

ICC1

Average Operating Current

-

mA

-

25

-

mA

-

5

/CS1

≤ 0.2V, CS2 ≥Vdd-0.2V,

VIN

≤0.2V or VIN≥Vdd-0.2V,

Cycle Time=1

µs.

100% Duty, II/O=0mA

ISB

TTL Standby Current

-

mA

-

0.5

/CS1,CS2=VIH or /UB,/LB= VIH

ISB1

Standby Current(CMOS Input)

-

µA

-

140

/CS1, CS2

≥Vdd-0.2V

or /UB,/LB

≥Vdd-0.2V

VOL

Output Low Voltage

-

V

-

0.4

IOL=2.1mA

VOH

Output High Voltage

2.4

V

-

IOH=-1.0mA

ICC2

IDPD

Deep Power Down Curent

-

µA

-

2

CS2

≤VSS+0.2V

70ns

-

µA

-

120

85ns

-

mA

-

20

/CS1=VIL, CS2=VIH,

VIN=VIH or VIL, Cycle Time=Min.

100% Duty, II/O=0mA

70ns

85ns

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