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BFV469 Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BFV469
Description  NPN high-voltage transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFV469 Datasheet(HTML) 3 Page - NXP Semiconductors

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1999 Apr 26
3
Philips Semiconductors
Product specification
NPN high-voltage transistor
BFV469
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
Rth j-mb
thermal resistance from junction to mounting base
10
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 100 V
100
nA
IEBO
emitter cut-off current
IC = 0; VEB =4V
100
nA
hFE
DC current gain
VCE = 10 V; see Fig.2
IC = 10 mA
150
IC =50mA
20
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB =5mA
200
mV
Cre
feedback capacitance
IC =ic = 0; VCB = 25 V; f = 1 MHz
1.5
pF
fT
transition frequency
IC = 20 mA; VCE = 20 V; f = 100 MHz
150
MHz
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
hFE
400
300
100
200
MGD846
10−1
110
IC (mA)
102
VCE =10V.


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