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BFV469 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFV469 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 26 3 Philips Semiconductors Product specification NPN high-voltage transistor BFV469 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 100 K/W Rth j-mb thermal resistance from junction to mounting base 10 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 100 V − 100 nA IEBO emitter cut-off current IC = 0; VEB =4V − 100 nA hFE DC current gain VCE = 10 V; see Fig.2 IC = 10 mA 150 − IC =50mA 20 − VCEsat collector-emitter saturation voltage IC = 30 mA; IB =5mA − 200 mV Cre feedback capacitance IC =ic = 0; VCB = 25 V; f = 1 MHz − 1.5 pF fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 150 − MHz Fig.2 DC current gain; typical values. handbook, full pagewidth 0 hFE 400 300 100 200 MGD846 10−1 110 IC (mA) 102 VCE =10V. |
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