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HY64LD16162M-E Datasheet(PDF) 3 Page - Hynix Semiconductor |
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HY64LD16162M-E Datasheet(HTML) 3 Page - Hynix Semiconductor |
3 / 11 page HY64LD16162M Series 3 Revision 1.7 March. 2002 Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability. TRUTH TABLE Power Standby /CS1 H CS2 H /WE X /OE X /LB X /UB X Mode Deselected I/O1~I/O8 High-Z I/O9~I/O16 High-Z I/O Pin X X L L L L L L L L L L H H H H H H H H H H X X L H H L H H L H H X X X L H X L H X L H X H L L L H H H L L L X H H H H L L L L L L Deselected Deselected Write Read Output Disabled Write Read Output Disabled Write Read Output Disabled High-Z High-Z High-Z High-Z DIN High-Z DOUT High-Z High-Z High-Z DIN High-Z DOUT High-Z DIN DOUT High-Z High-Z High-Z DIN DOUT High-Z Deep Power Down Standby Active Active Active Active Active Active Active Active Active Note 1. H=VIH, L=VIL, X=don’ t care(VIL or VIH) 2. /UB, /LB(Upper, Lower Byte enable) These active LOW inputs allow individual bytes to be written or read. When /LB is LOW, data is written or read to the lower byte, I/O1 - I/O8. When /UB is LOW, data is written or read to the upper byte, I/O9 - I/O16. ORDERING INFORMATION Part Number Speed Package HY64LD16162M-E 85 FBGA HY64LD16162M-I 85 FBGA Power LL-Part LL-Part Temperature E1 I2 ABSOLUTE MAXIMUM RATINGS 1 Symbol Parameter Rating Remark VIN,VOUT Input/Output Voltage -0.3 to Vdd+0.3 Unit V Vdd Power Supply -0.3 to 3.6 V TA Ambient Temperature -25 to 85 HY64LD16162M-E °C TSTG Storage Temperature -55 to 150 °C PD Power Dissipation 1.0 W TSOLDER Ball Soldering Temperature & Time 260•10 °C•sec -40 to 85 HY64LD16162M-I °C Note 1. E : Extended Temp. (-25 °C ~ 85°C) 2. I : Industrial Temp. (-40 °C ~ 85°C) |
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