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HY29DL162TF-12 Datasheet(PDF) 9 Page - Hynix Semiconductor

Part # HY29DL162TF-12
Description  16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY29DL162TF-12 Datasheet(HTML) 9 Page - Hynix Semiconductor

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9
r1.3/June 01
HY29DL162/HY29DL163
Table 4. HY29DL16x Secure Sector Addressing
1
k
n
a
B
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B
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9
2
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8
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S1
1
1
=
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7
1
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17
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-
0
S]
7
1
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9
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1
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3
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8
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9
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0
Sec2 NOT Programmed or Protected at the Factory
If the security feature is not required, the Sec2 can
be treated as an additional Flash memory space
of 64 Kbytes. The Sec2 can be read, programmed,
and erased as often as required. The Sec2 area
can be protected using the following procedure:
n Write the three-cycle Enter Secure Sector Re-
gion command sequence
n Then follow the sector protect algorithm shown
in Figure 1, except that RESET# may be at
either V
IH or VID. This allows in-system protec-
tion of the Secure Sector without raising any
device pin to a high voltage. Note that this
method is only applicable to the Secure Sec-
tor.
n Once the Secure Sector is locked and verified,
the system must write the Exit Secure Sector
command sequence to return to reading and
writing the remainder of the array.
Sec2 protection must be used with caution since,
once protected, there is no procedure available
for unprotecting the Sec2 area and none of the
bits in the Sec2 memory space can be modified in
any way.
Table 3. HY29DL16x Bank Options
e
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D
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W
K
/
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A
3
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2
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3
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2
6
1
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9
2
Y
H2
3
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4
6X
X
X
1
1
1
1
1F
F
F
F
F
1
x
0
-
0
0
0
0
F
1
x
0F
F
F
F
F
x
0
-
0
0
0
8
F
x
0
B
3
6
1
/
B
2
6
1
L
D
9
2
Y
H2
3
/
4
6X
X
X
0
0
0
0
0F
F
F
F
0
0
x
0
-
0
0
0
0
0
0
x
0F
F
F
7
0
x
0
-
0
0
0
0
0
x
0
Notes:
1. ‘X’ indicates don’t care.
2. ‘0xN. . . N’ indicates an address in hexadecimal notation.
3. The address range in byte mode is A[19:0, -1]. The address range in word mode is A[19:0].
BUS OPERATIONS
Device bus operations are initiated through the
internal command register, which consists of sets
of latches that store the commands, along with
the address and data information, if any, needed
to execute the specific command. The command
register itself does not occupy any addressable
memory location. The contents of the command
register serve as inputs to an internal state ma-
chine whose outputs control the operation of the
device. Table 5 lists the normal bus operations,
the inputs and control levels they require, and the
resulting outputs. Certain bus operations require
a high voltage on one or more device pins. Those
are described in Table 6.
Read Operation
Data is read from the HY29DL16x by using stan-
dard microprocessor read cycles while placing the
byte or word address on the device’s address in-
puts. The host system must drive the CE# and
OE# pins Low and drive WE# High for a valid read
operation to take place. The BYTE# pin deter-
mines whether the device outputs array data in
words (DQ[15:0]) or in bytes (DQ[7:0]).


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