HY29DS162BF-12I datasheet(9/48 Pages) HYNIX

Part #	HY29DS162BF-12I

Description	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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9

HY29DS162/HY29DS163

r1.3/Apr 01

Table 4. HY29DS16x Secure Sector Addressing

1

k

n

a

B

2

k

n

a

B

e

c

i

v

e

D

e

c

n

e

r

e

f

e

R

)

t

i

b

M

(

e

z

i

S

s

r

o

t

c

e

S

s

e

r

d

A

k

n

a

B

)

b

M

(

e

z

i

S

s

r

o

t

c

e

S

s

e

r

d

A

k

n

a

B

T

2

6

1

S

D

9

2

Y

H1

e

l

b

a

T2

8

3

S

-

8

2

S1

1

=

]

7

1

:

9

1

[

A4

17

2

S

-

0

S]

7

1

:

9

1

[

A

≤

0

1

T

3

6

1

S

D

9

2

Y

H1

e

l

b

a

T4

8

3

S

-

4

2

S1

1

=

]

8

1

:

9

1

[

A2

13

2

S

-

0

S]

8

1

:

9

1

[

A

≤ 0

1

B

2

6

1

S

D

9

2

Y

H2

e

l

b

a

T2

0

1

S

-

0

S0

0

=

]

7

1

:

9

1

[

A4

18

3

S

-

1

S]

7

1

:

9

1

[

A

≥

1

0

B

3

6

1

S

D

9

2

Y

H2

e

l

b

a

T4

4

1

S

-

0

S0

0

=

]

8

1

:

9

1

[

A2

18

3

S

-

5

1

S]

8

1

:

9

1

[

A

≥ 1

0

Sec2 NOT Programmed or Protected at the Factory

If the security feature is not required, the Sec2 can

be treated as an additional Flash memory space

of 64 Kbytes. The Sec2 can be read, programmed,

and erased as often as required. The Sec2 area

can be protected using the following procedure:

n Write the three-cycle Enter Secure Sector Re-

gion command sequence

n Then follow the sector protect algorithm shown

in Figure 1, except that RESET# may be at

either V

IH or VID. This allows in-system protec-

tion of the Secure Sector without raising any

device pin to a high voltage. Note that this

method is only applicable to the Secure Sec-

tor.

n Once the Secure Sector is locked and verified,

the system must write the Exit Secure Sector

command sequence to return to reading and

writing the remainder of the array.

Sec2 protection must be used with caution since,

once protected, there is no procedure available

for unprotecting the Sec2 area and none of the

bits in the Sec2 memory space can be modified in

any way.

Table 3. HY29DS16x Bank Options

e

c

i

v

e

D

e

z

i

S

r

o

t

c

e

S

W

K

/

B

K

s

e

r

d

A

r

o

t

c

e

S

]

2

1

:

9

1

[

A

1

e

d

o

M

e

t

y

B

e

g

n

a

R

s

e

r

d

A

3

,

2

e

d

o

M

d

r

o

W

e

g

n

a

R

s

e

r

d

A

3

,

2

T

3

6

1

/

T

2

6

1

S

D

9

2

Y

H2

3

/

4

6X

X

1

1F

F

1

x

0

-

0

F

1

x

0F

F

x

0

-

0

8

F

x

0

B

3

6

1

/

B

2

6

1

S

D

9

2

Y

H2

3

/

4

6X

X

0

0F

F

0

x

0

-

0

x

0F

F

7

0

x

0

-

0

x

0

Notes:

1. ‘X’ indicates don’t care.

2. ‘0xN. . . N’ indicates an address in hexadecimal notation.

3. The address range in byte mode is A[19:0, -1]. The address range in word mode is A[19:0].

BUS OPERATIONS

Device bus operations are initiated through the

internal command register, which consists of sets

of latches that store the commands, along with

the address and data information, if any, needed

to execute the specific command. The command

register itself does not occupy any addressable

memory location. The contents of the command

register serve as inputs to an internal state ma-

chine whose outputs control the operation of the

device. Table 5 lists the normal bus operations,

the inputs and control levels they require, and the

resulting outputs. Certain bus operations require

a high voltage on one or more device pins. Those

are described in Table 6.

Read Operation

Data is read from the HY29DS16x by using stan-

dard microprocessor read cycles while placing the

byte or word address on the device’s address in-

puts. The host system must drive the CE# and

OE# pins Low and drive WE# High for a valid read

operation to take place. The BYTE# pin deter-

mines whether the device outputs array data in

words (DQ[15:0]) or in bytes (DQ[7:0]).

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