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BSO315C Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BSO315C
Description  SIPMOS Small-Signal-Transistor
Download  13 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSO315C Datasheet(HTML) 1 Page - Infineon Technologies AG

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1999-09-22
Page 1
Preliminary data
BSO 315 C
SIPMOS® Small-Signal-Transistor
Product Summary
N
P
Drain source voltage
VDS
30
-30
V
Drain-Source on-state
resistance
RDS(on)
0.11
0.25
Ω
Continuous drain current
ID
3.4
-2.3
A
Features
• Dual N- and P -Channel
• Enhancement mode
• Logic Level
• Avalanche rated
• dv/dt rated
Type
Package
Ordering Code
BSO 315 C
SO 8
Q67041-S4014
Maximum Ratings,at
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
N
P
Continuous drain current
TA = 25 °C
TA = 70 °C
ID
3.4
2.7
-2.3
-1.8
A
Pulsed drain current
TA = 25 °C
ID puls
11.6
-7.2
Avalanche energy, single pulse
ID = 2.9 A, VDD = 25 V, RGS = 25 Ω
ID = -1.8 A, VDD = -25 V, RGS = 25 Ω
EAS
25
-
-
35
mJ
Avalanche energy, periodic limited by
Tjmax
EAR
0.2
0.2
Reverse diode d
v/dt, Tjmax = 150 °C
IS = 2.9 A, VDS = 24 , di/dt = 200 A/µs
IS = -1.8 A, VDS = -24 , di/dt = -200 A/µs
d
v/dt
6
-
-
6
kV/µs
Gate source voltage
VGS
±20
±20
V
Power dissipation
TA = 25 °C
Ptot
2
2
W
Operating and storage temperature
Tj , Tstg
-55...+150
°C
IEC climatic category; DIN IEC 68-1
55/150/56


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