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BFR31 Datasheet(PDF) 4 Page - NXP Semiconductors

Part # BFR31
Description  N-channel field-effect transistors
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFR31 Datasheet(HTML) 4 Page - NXP Semiconductors

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background image
1997 Dec 05
4
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IGSS
gate cut-off current
VDS = 0; VGS = −10 V
−−0.2
nA
IDSS
drain current
VGS = 0; VDS =10V
BFR30
4
10
mA
BFR31
1
5
mA
VGS
gate-source voltage
ID = 1 mA; VDS =10V
BFR30
−0.7
−3V
BFR31
0
−1.3
V
VGS
gate-source voltage
ID =50 µA; VDS =10V
BFR30
−−4V
BFR31
−−2V
VGSoff
gate-source cut-off voltage
ID = 0.5 nA; VDS =10V
BFR30
−−5V
BFR31
−−2.5
V
y
fs
common-source transfer admittance
ID = 1 mA; VDS = 10 V; f = 1 kHz;
Tamb =25 °C
BFR30
1
4
mS
BFR31
1.5
4.5
mS
y
fs
common-source transfer admittance
ID = 200 µA; VDS = 10 V; f = 1 kHz;
Tamb =25 °C
BFR30
0.5
mS
BFR31
0.75
mS
y
os
common source output admittance
ID = 1 mA; VDS = 10 V; f = 1 kHz
BFR30
40
µS
BFR31
25
µS
y
os
common source output admittance
ID = 200 µA; VDS = 10 V; f = 1 kHz
BFR30
20
µS
BFR31
15
µS
Cis
input capacitance
VDS =10V; f=1MHz
ID =1mA
4pF
ID = 0.2 nA
4pF
Crs
feedback capacitance
VDS = 10 V; f = 1 MHz; Tamb =25 °C
ID =1mA
1.5
pF
ID = 200 µA
1.5
pF
Vn
equivalent input noise voltage
ID = 200 µA; VDS =10V;
B = 0.6 to 100 Hz
0.5
µV


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