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EDI9LC644V2010BC Datasheet(PDF) 7 Page - White Electronic Designs Corporation |
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EDI9LC644V2010BC Datasheet(HTML) 7 Page - White Electronic Designs Corporation |
7 / 25 page 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com EDI9LC644V SDRAM AC CHARACTERISTICS Symbol 125MHz 100MHz 83MHz Parameter Min Max Min Max Min Max Units Clock Cycle Time1 CL = 3 tCC 8 1000 10 1000 12 1000 ns CL = 2 tCC 10 1000 12 1000 15 1000 Clock to valid Output delay1,2 tSAC 67 8 ns Output Data Hold Time2 tOH 33 3 ns Clock HIGH Pulse Width3 tCH 33 3 ns Clock LOW Pulse Width3 tCL 33 3 ns Input Setup Time3 tSS 22 2 ns Input Hold Time3 tSH 11 1 ns CLK to Output Low-Z2 tSLZ 22 2 ns CLK to Output High-Z tSHZ 77 8 ns Row Active to Row Active Delay4 tRRD 20 20 24 ns RAS to CAS Delay4 tRCD 20 20 24 ns Row Precharge Time4 tRP 20 20 24 ns Row Active Time4 tRAS 50 10,000 50 10,000 60 10,000 ns Row Cycle Time - Operation4 tRC 70 80 90 ns Row Cycle Time - Auto Refresh4,8 tRFC 70 80 90 ns Last Data in to New Column Address Delay5 tCDL 1 1 1 CLK Last Data in to Row Precharge5 tRDL 1 1 1 CLK Last Data in to Burst Stop5 tBDL 1 1 1 CLK Column Address to Column Address Delay6 tCCD 1.5 1.5 1.5 CLK Number of Valid Output Data7 22 2 12 1 ea NOTES: 1. Parameters depend on programmed CAS latency. 2. If clock rise time is longer than 1ns (tRISE/2 -0.5)ns should be added to the parameter. 3. Assumed input rise and fall time = 1ns. If tRISE of tFALL are longer than 1ns. [(tRISE = tFALL)/2] - 1ns should be added to the parameter. 4. The minimum number of clock cycles required is detemined by dividing the minimum time required by the clock cycle time and then rounding up to the next higher integer. 5. Minimum delay is required to complete write. 6. All devices allow every cycle column address changes. 7. In case of row precharge interrupt, auto precharge and read burst stop. 8. A new command may be given tRFC after self-refresh exit. |
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