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BFQ621 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BFQ621 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 10 page 1995 Sep 26 5 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 Fig.2 Intermodulation distortion and second order distortion MATV test circuit. L1 = 8 nH. L2 = 15 nH, 2 turns copper wire, internal diameter 2 mm. L3 = 10 nH, 2 turns copper wire, internal diameter 1.5 mm. L5: Lp = 21 mm; Rc = 75 Ω. L6: Lp = 16 mm; Rc = 75 Ω. MEA260 handbook, full pagewidth MEA260 DUT VBB 10 k Ω 10 nF 1 pF L5 input 75 Ω 240 Ω L2 33 Ω 33 Ω L3 10 nF 1 pF 10 nF L4 output 75 Ω VCC L1 10 nF L6 4.7 µF 10 nF Fig.3 Transition frequency as a function of collector current; typical values. VCE = 18 V; f = 1 GHz. handbook, halfpage 0 100 200 50 150 10 6 8 2 0 4 MLC991 (GHz) T f I (mA) C Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. IC = 0; f = 1 MHz. handbook, halfpage MLC990 0 2.0 1.5 1.0 0.5 0 5 10 15 20 25 V (V) CB C re (pF) |
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