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BFQ235 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFQ235 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1998 Oct 06 2 Discrete Semiconductors Product specification NPN video transistor BFQ235A FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buffer/driver in high-resolution colour graphics monitors. DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. PINNING PIN DESCRIPTION 1 emitter 2 collector 3 base Fig.1 Simplified outline (SOT128B; TO-202). fpage 12 3 MGA323 QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 115 V VCER collector-emitter voltage RBE = 100 Ω− − 110 V IC collector current (DC) −− 300 mA Ptot total power dissipation Ts ≤ 100 °C; note 1 −− 3W hFE DC current gain IC = 50 mA; VCE = 10 V; Tamb =25 °C20 35 − fT transition frequency IC = 50 mA; VCE = 10 V; Tamb =25 °C 0.8 1.2 − GHz SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 115 V VCEO collector-emitter voltage open base − 95 V VCER collector-emitter voltage RBE = 100 Ω− 110 V VEBO emitter-base voltage open collector − 3V IC collector current (DC) − 300 mA Ptot total power dissipation Ts ≤ 100 °C; note 1; see Fig.3 − 3W Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C |
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