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STGP10NC60KD Datasheet(PDF) 4 Page - STMicroelectronics |
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STGP10NC60KD Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STGB10NC60KD - STGP10NC60KD - STGF10NC60KD 4/17 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test Condictions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC= 1mA, VGE= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage VGE= 15V, IC= 5A VGE= 15V, IC= 5A, Tc= 125°C 2 1.8 2.5 V V VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250 µA 4.5 6.5 V ICES Collector cut-off Current (VGE = 0) VCE= Max Rating,TC= 25°C VCE=Max Rating,TC= 125°C 150 1 µA mA IGES Gate-Emitter Leakage Current (VCE = 0) VGE= ±20V , VCE= 0 ±100 nA gfs Forward Transconductance VCE = 15V, IC= 5A 15 S Table 4. Dynamic Symbol Parameter Test Condictions Min. Typ. Max. Unit Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1MHz, VGE = 0 380 46 8.5 pF pF pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 390V, IC = 5A, VGE = 15V, (see Figure 18) 19 5 9 nC nC nC |
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