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H5N2901FN Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # H5N2901FN
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H5N2901FN Datasheet(HTML) 3 Page - Renesas Technology Corp

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H5N2901FN
Rev.1.00, May.28.2004, page 3 of 7
Main Characteristics
40
30
20
10
0
50
100
150
200
300
100
30
10
3
1
13
10 30
100 300 1000
0.3
0.1
1000
Ta = 25
°C
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
100
µs
1 ms
PW
=
10
ms
(1shot)
DC
Operation
(Tc
=
25
°C)
10
µs
Operation in
this area is
limited by RDS(on)
100
80
60
40
20
0
48
12
16
20
100
80
60
40
20
0
24
68
10
10 V
VGS = 5 V
Tc = 75
°C
25
°C
–25
°C
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
6 V
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
Pulse Test
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
5
4
3
2
1
0
48
12
16
20
1
5
20
100
210
50
0.2
0.1
0.05
0.02
0.01
I
= 30 A
D
15 A
V
= 10 V
GS
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current
ID (A)
Pulse Test
7 V
9 A
8 V
0.03
0.01
0.1 0.3


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