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H5N2901FN Datasheet(PDF) 3 Page - Renesas Technology Corp |
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H5N2901FN Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page H5N2901FN Rev.1.00, May.28.2004, page 3 of 7 Main Characteristics 40 30 20 10 0 50 100 150 200 300 100 30 10 3 1 13 10 30 100 300 1000 0.3 0.1 1000 Ta = 25 °C Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area 100 µs 1 ms PW = 10 ms (1shot) DC Operation (Tc = 25 °C) 10 µs Operation in this area is limited by RDS(on) 100 80 60 40 20 0 48 12 16 20 100 80 60 40 20 0 24 68 10 10 V VGS = 5 V Tc = 75 °C 25 °C –25 °C Drain to Source Voltage VDS (V) Typical Output Characteristics 6 V Gate to Source Voltage VGS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test Pulse Test Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 4 3 2 1 0 48 12 16 20 1 5 20 100 210 50 0.2 0.1 0.05 0.02 0.01 I = 30 A D 15 A V = 10 V GS Pulse Test Static Drain to Source on State Resistance vs. Drain Current Drain Current ID (A) Pulse Test 7 V 9 A 8 V 0.03 0.01 0.1 0.3 |
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