Zener Diodes

1

Publication date: March 2004

SKE00014CED

Silicon planar type

For stabilization of power supply

■ Features

• Large power dissipation P

• Zener voltage V

• Zener voltage allowable deviation: 10%

• Auto mounting possible

■ Absolute Maximum Ratings T

Unit : mm

Parameter

Symbol

Rating

Unit

Repetitive peak forward current

500

mA

1

1.0

W

Non-repetitive reverse surge

100

W

2

Junction temperature

150

°C

Storage temperature

−40 to +150

°C

■ Common Electrical Characteristics T

a

1: Anode

2: Cathode

NMiniP2-J1 Package

Marking Symbol

Refer to the list of the electrical

characteristics within part numbers

(Example)

MAZY047: 4.7

2

1

8˚

0.25

+0.1

–0.05

= 1.0 W achieved with a printed circuit board (alumina)

t

= 50 µs for the product of V

Z

≤ 6.8 V

*2: t

= 100 µs, T

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

1.2

V

2

Specified value

V

Zener operating resistance

Specified value

Ω

Reverse current

Specified value

µA

3

Specified value

mV/

°C

Refer to the list of the

electrical characteristics

within part numbers

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 5 MHz.

= 25°C to 150°C

Note) The part number in the parenthesis shows conventional part number.