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K7R323682C-FCI20 Datasheet(PDF) 3 Page - Samsung semiconductor

Part # K7R323682C-FCI20
Description  1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
- 3 -
Rev. 1.1 August 2006
K7R323682C
K7R321882C
K7R320982C
1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDRTM II b2 SRAM
FEATURES
FUNCTIONAL BLOCK DIAGRAM
• 1.8V+0.1V/-0.1V Power Supply.
• DLL circuitry for wide output data valid window and future fre-
quency scaling.
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/
-0.1V for 1.8V I/O
.
• Separate independent read and write data ports
with concurrent read and write operation
• HSTL I/O
• Full data coherency, providing most current data.
• Synchronous pipeline read with self timed early write.
• Registered address, control and data input/output.
• DDR (Double Data Rate) Interface on read and write ports.
• Fixed 2-bit burst for both read and write operation.
• Clock-stop supports to reduce current.
• Two input clocks (K and K) for accurate DDR timing at clock
rising edges only.
• Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches.
• Two echo clocks (CQ and CQ) to enhance output data
traceability.
• Single address bus.
• Byte write (x9, x18, x36) function.
• Separate read/write control pin (R and W)
• Simple depth expansion with no data contention.
• Programmable output impedance.
• JTAG 1149.1 compatible test access port.
• 165FBGA(11x15 ball array FBGA) with body size of 15x17mm
& Lead Free
R
ADDRESS
W
C
C
D (Data in)
ADD
REG
DATA
REG
CLK
GEN
CTRL
LOGIC
1Mx36
(2Mx18)
MEMORY
ARRAY
WRITE DRIVER
K
K
BWX
36 (or 18)
4(or 2)
* -F(E)C(I)
F(E) [Package type]: E-Pb Free, F-Pb
C(I) [Operating Temperature]: C-Commercial, I-Industrial
Org.
Part
Number
Cycle
Time
Access
Time
Unit
X36
K7R323682C-F(E)C(I)30
3.3
0.45
ns
K7R323682C-F(E)C(I)25
4.0
0.45
ns
K7R323682C-F(E)C(I)20
5.0
0.45
ns
X18
K7R321882C-F(E)C(I)30
3.3
0.45
ns
K7R321882C-F(E)C(I)25
4.0
0.45
ns
K7R321882C-F(E)C(I)20
5.0
0.45
ns
X9
K7R320982C-F(E)C(I)30
3.3
0.45
ns
K7R320982C-F(E)C(I)25
4.0
0.45
ns
K7R320982C-F(E)C(I)20
5.0
0.45
ns
SELECT OUTPUT CONTROL
Notes: 1. Numbers in ( ) are for x18 device, x9 device also the same with appropriate adjustments of depth and width.
72
19
19 (or 20)
36 (or 18)
Q(Data Out)
36 (or 18)
36 (or 18)
72
(Echo Clock out)
CQ, CQ
QDR SRAM and Quad Data Rate comprise a new family of products developed by Cypress, Renesas, IDT, NEC and Samsung technology.
(or 20)
(or 36)
(or 36)


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