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NTD14N03RT4 Datasheet(PDF) 1 Page - ON Semiconductor |
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NTD14N03RT4 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2003 October, 2003 − Rev. 3 1 Publication Order Number: NTD14N03R/D NTD14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • Planar HD3e Process for Fast Switching Performance • Low R DS(on) to Minimize Conduction Loss • Low C iss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 25 V dc Gate−to−Source Voltage − Continuous VGS ±20 V dc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C, Chip − Continuous @ TA = 25°C, Limited by Package − Single Pulse (tp ≤ 10 ms) RqJC PD ID ID ID 6.0 20.8 14 11.4 28 °C/W W A A A Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C RqJA PD ID 80 1.56 3.1 °C/W W A Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C RqJA PD ID 120 1.04 2.5 °C/W W A Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C 1. When surface mounted to an FR4 board using 0.5 sq. in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. http://onsemi.com 14 AMPERES, 25 VOLTS RDS(on) = 70.4 mW (Typ) D S G N−CHANNEL Device Package Shipping ORDERING INFORMATION DPAK 75 Units/Rail MARKING DIAGRAM & PIN ASSIGNMENTS 14N03 = Device Code Y = Year WW = Work Week CASE 369C NTD14N03R−1 DPAK Straight Lead 75 Units/Rail NTD14N03RT4 DPAK 2500 Tape & Reel 4 Drain 3 Source 1 Gate 2 Drain DPAK (Surface Mount) STYLE 2 CASE 369D DPAK (Straight Lead) STYLE 2 1 2 3 4 4 Drain 1 Gate 2 Drain 3 Source 4 1 2 3 NTD14N03R |
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