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SST39VF6401-90-4C-EKE Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST39VF6401-90-4C-EKE Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 32 page Preliminary Specifications ©2003 Silicon Storage Technology, Inc. S71223-03-000 11/03 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 / SST39VF6401 SST39VF1602 / SST39VF3202 / SST39VF6402 FEATURES: • Organized as 1M x16: SST39VF1601/1602 2M x16: SST39VF3201/3202 4M x16: SST39VF6401/6402 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 5 MHz) – Active Current: 9 mA (typical) – Standby Current: 3 µA (typical) – Auto Low Power Mode: 3 µA (typical) • Hardware Block-Protection/WP# Input Pin – Top Block-Protection (top 32 KWord) for SST39VF1602/3202/6402 – Bottom Block-Protection (bottom 32 KWord) for SST39VF1601/3201/6401 • Sector-Erase Capability – Uniform 2 KWord sectors • Block-Erase Capability – Uniform 32 KWord blocks • Chip-Erase Capability • Erase-Suspend/Erase-Resume Capabilities • Hardware Reset Pin (RST#) • Security-ID Feature – SST: 128 bits; User: 128 bits • Fast Read Access Time: – 70 ns – 90 ns • Latched Address and Data • Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 40 ms (typical) – Word-Program Time: 7 µs (typical) • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bits – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 48-lead TSOP (12mm x 20mm) – 48-ball TFBGA (6mm x 8mm) for 16M and 32M – 48-ball TFBGA (8mm x 10mm) for 64M PRODUCT DESCRIPTION The SST39VF160x/320x/640x devices are 1M x16, 2M x16, and 4M x16 respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160x/320x/640x write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Featuring high performance Word-Program, the SST39VF160x/320x/640x devices provide a typical Word- Program time of 7 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program opera- tion. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39VF160x/320x/640x devices are suited for appli- cations that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inher- ently use less energy during Erase and Program than alter- native flash technologies. The total energy consumed is a function of the applied voltage, current, and time of applica- tion. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technolo- gies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage appli- cations. The SuperFlash technology provides fixed Erase and Pro- gram times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories |
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