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IRHY54034CM Datasheet(PDF) 1 Page - International Rectifier |
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IRHY54034CM Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 18* ID @ VGS = 12V, TC = 100°C Continuous Drain Current 18* IDM Pulsed Drain Current À 72 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 110 mJ IAR Avalanche Current À 18 A EAR Repetitive Avalanche Energy À 7.5 mJ dv/dt Peak Diode Recovery dv/dt  10 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063in./1.6mm from case for 10sec) Weight 4.3 (Typical) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. oC A 04/26/06 www.irf.com 1 * Current is limited by package Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight For footnotes refer to the last page RADIATION HARDENED JANSR2N7483T3 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-257AA) REF: MIL-PRF-19500/702 5 5 TECHNOLOGY IRHY57034CM TO-257AA Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY57034CM 100K Rads (Si) 0.04 Ω 18A* JANSR2N7483T3 IRHY53034CM 300K Rads (Si) 0.04 Ω 18A* JANSF2N7483T3 IRHY54034CM 500K Rads (Si) 0.04 Ω 18A* JANSG2N7483T3 IRHF58034CM 1000K Rads (Si) 0.048 Ω 18A* JANSH2N7483T3 PD - 93825D |
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