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BFG403W Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFG403W Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 1998 Mar 11 3 Philips Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the emitter pins. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 10 V VCEO collector-emitter voltage open base − 4.5 V VEBO emitter-base voltage open collector − 1V IC collector current (DC) − 3.6 mA Ptot total power dissipation Ts ≤ 140 °C; note 1; see Fig.2 − 16 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 820 K/W Fig.2 Power derating curve. handbook, halfpage 0 40 80 120 160 MGD957 20 0 10 Ts (°C) Ptot (mW) |
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