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BFG35 Datasheet(PDF) 9 Page - NXP Semiconductors |
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BFG35 Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 16 page  1999 Aug 24 9 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 Fig.13 Common emitter input reflection coefficient (S11). IC = 100 mA; VCE = 10 V; Tamb =25 °C; Zo =50 Ω. handbook, full pagewidth MBB380 10 25 50 100 250 10 25 50 100 250 0 + j – j 0 3 GHz 10 25 50 100 250 Fig.14 Common emitter forward transmission coefficient (S21). IC = 100 mA; VCE = 10 V; Tamb =25 °C. handbook, full pagewidth MBB286 0 o 30o 60o 90o 120o 150o 180 o 150o 120o 90o 60o 30o 40 20 30 50 10 |
Similar Part No. - BFG35 |
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Similar Description - BFG35 |
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