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AT1511R Datasheet(PDF) 1 Page - Aimtron Technology |
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AT1511R Datasheet(HTML) 1 Page - Aimtron Technology |
1 / 9 page AT1511 Preliminary product Information FET BIAS CONTROLLER AND TONE DETECTION 2F, No.10, Prosperity RD. II, Science-Based Industrial Park, Hsinchu 300,Taiwan, R.O.C. Tel: 886-3-563-0878 http://www.aimtron.com.tw Fax: 886-3-563-0879 Email: service@aimtron.com.tw 1 Features • Provides bias for GaAs and HEMT FETs • Drives up to three FETs • Dynamic FET protection • Drain current set by external resistor • Regulated negative rail generator requires only 2 external capacitors • Choice in drain voltage • Wide supply voltage range • Polarisation switch for LNBs - supporting zero volt gate switching topology. • 22kHz tone detection for band switching • Compliant with ASTRA control specifications • SSOP surface mount package Applications ˙ Satellite receiver LNBs ˙ Private mobile radio (PMR) ˙ Cellular telephones Description The AT1511 includes bias circuits to drive up to three external FETs. A control input to the device selects either one of two FETs as operational using 0V gate switching methodology, the third FET is permanently active. This feature is particularly used as an LNB polarisation switch. Also specific to LNB applications is the enhanced 22kHz tone detection and logic output feature which is used to enable high and low band frequency switching. The detector has been specifically designed to reject inerference such as low frequency signals and DiSEqCTM tone bursts - without the use of additional external components. Drain current setting of the AT1511 is user selectable over the range 0 to 15mA, this is achieved with the addition of a single resistor. The series also offers the choice of FET drain voltage, the AT1511 gives 2 volts. These devices are unconditionally stable over the full working temperature with the FETs in place, subject to the inclusion of the recommended gate and drain capacitors. These ensure RF stability and minimal injected noise. It is possible to use less than the devices full complement of FET bias controls, unused drain and gate connections can be left open circuit without affecting operation of the remaining bias circuits. In order to protect the external FETs the circuits have been designed to ensure that, under any conditions including power up/down transients, the gate drive from the bias circuits cannot exceed the range -3.5V to 1V. Furthermore if the negative rail experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will shut down avoiding excessive current flow. The AT1511 are available in SSOP20 for the minimum in device size. Device operating temperature is -40 to 70°C to suit a wide range of environmental conditions. Aimtron reserves the right without notice to change this circuitry and specifications. |
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