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PTH08T210WAH Datasheet(PDF) 2 Page - Texas Instruments |
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PTH08T210WAH Datasheet(HTML) 2 Page - Texas Instruments |
2 / 30 page www.ti.com PTH08T210W 2,6 5, 9 13 + 12 VI Track GND TT 7,8 3,4 GND GND +Sense 10 L O A D −Sense GND + 1 Inhibit INH/UVLO Track 14 11 −Sense +Sense UDG−05097 RTT 1% 0.05 W (Optional) CO 470 µF (Required) VO RSET 1% 0.05 W (Required) CI 470 µF (Required) RUVLO 1% 0.05 W (Opional) VOAdj TurboTranst VO VI PTH08T210W SLTS262D – OCTOBER 2005 – REVISED OCTOBER 2006 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. A. RSET is required to set the output voltage higher than 0.7 V. See the Electrical Characteristics table. ORDERING INFORMATION For the most current package and ordering information, see the Package Option Addendum at the end of this datasheet, or see the TI website at www.ti.com. 2 Submit Documentation Feedback |
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